| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a joint material for semiconductor device that is low in environmental load, inexpensive and superior in heat resistance, and to provide a semiconductor device using it, and its manufacturing method. <P>SOLUTION: The semiconductor device has a structure wherein a semiconductor element and a copper member are joined. The semiconductor element and the copper member are joined with each other at a melting point of 250°C or higher by a first bonding member made mainly of zinc (Zn), and the bonding member is formed in an area near to a boundary surface with the semiconductor element in a manner that nickel (Ni) may be inclined and spread. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
