| 摘要 |
PROBLEM TO BE SOLVED: To provide a small-sized high frequency semiconductor device which has a high output, reduces a gain drop, and improves high-speed performance. SOLUTION: The high frequency semiconductor device comprises a plurality of gate electrodes 34 arranged on the front surface of the epitaxial layer 12c of a substrate 12; a drain electrode 32 and a source electrode 36 which are alternately arranged one by one via the gate electrode; a first cell 14a including source electrode connection wiring 26 to which the source electrode is connected over the gate electrode and the drain electrode, and drain electrode connection wiring 20 to which the drain electrode is connected over the gate electrode and the source electrode; a second cell 14b which has the same configuration as that of the first cell and is arranged in the direction of extension for the gate electrodes of the first cell, and in which drain electrode connection wiring is arranged proximately to drain electrode connection wiring of the first cell; and a gate electrode bar 16a which is arranged between drain electrode connection wiring of the first and second cells, and to which the gate electrodes of the two cells are connected. COPYRIGHT: (C)2005,JPO&NCIPI
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