| 摘要 |
PROBLEM TO BE SOLVED: To suppress a c-axis orientation and reduce a heat budget necessary for crystallization in manufacturing a ferroelectric thin film having a bismuth layer structure. SOLUTION: A manufacturing method for the ferroelectric thin film is provided. The method includes a process of forming a sedimentary film containing at least Bi, A, and B on a board, and a process of crystallizing the sedimentary film by a heat treatment to form the ferroelectric thin film represented by the chemical formula: Bi<SB>2</SB>A<SB>m-1</SB>B<SB>m</SB>O<SB>3m+3</SB>(where m stands for 2, 3, 4, 5, or 6; A stands for any one of metals having 1, 2, or 3 valences or a metal made by combining those metals; and B stands for any one of metals having 4, 5, or 6 valences or a metal made by combining those metals.) The process of forming the sedimentary film includes a process of changing the composition ratio of Bi in the sedimentary film in a direction of film thickness, so that the composition ratio of Bi becomes maximum near the center of the sedimentary film in the direction of film thickness. COPYRIGHT: (C)2005,JPO&NCIPI
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