发明名称 Method for removal of pattern resist over patterned metal having an underlying spacer layer
摘要 A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop clean process that removes polymer residues from the pattern resist surface. Next is an ash to remove the hardened pattern resist surface, followed by removal of the pattern resist.
申请公布号 US2005148192(A1) 申请公布日期 2005.07.07
申请号 US20030750142 申请日期 2003.12.31
申请人 DICARLO ANTHONY;WESNESKI LISA A. 发明人 DICARLO ANTHONY;WESNESKI LISA A.
分类号 G02B26/08;G03F7/42;H01L21/302;H01L21/461;(IPC1-7):H01L21/302 主分类号 G02B26/08
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