发明名称 |
Method for removal of pattern resist over patterned metal having an underlying spacer layer |
摘要 |
A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop clean process that removes polymer residues from the pattern resist surface. Next is an ash to remove the hardened pattern resist surface, followed by removal of the pattern resist.
|
申请公布号 |
US2005148192(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20030750142 |
申请日期 |
2003.12.31 |
申请人 |
DICARLO ANTHONY;WESNESKI LISA A. |
发明人 |
DICARLO ANTHONY;WESNESKI LISA A. |
分类号 |
G02B26/08;G03F7/42;H01L21/302;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
G02B26/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|