发明名称 |
Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency |
摘要 |
The present invention relates to a fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. In more detail, it relates to a P-p-n-N InGaAsP/InP ridge waveguide phase modulator fabricated to be that the phase change of the TE-mode is linearly proportional to the reverse bias voltage at 1.55 mum wavelength. The present invention presents a method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N<SUP>+</SUP>-InP substrate; forming a first waveguide layer of n-InGaAsP and a second waveguide layer of p-InGaAsP in sequence on the first cladding layer; forming a second cladding layer of P-InP and a third cladding layer of P-InP in sequence on the second waveguide layer; and forming an electrode layer of p<SUP>+</SUP>-InGaAs on the third cladding layer.
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申请公布号 |
US2005148107(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20040751858 |
申请日期 |
2004.01.06 |
申请人 |
BYUN YOUNG T.;PARK HWA S.;LEE SEOK;WOO DEOK H.;YI JONG C. |
发明人 |
BYUN YOUNG T.;PARK HWA S.;LEE SEOK;WOO DEOK H.;YI JONG C. |
分类号 |
G02F1/015;G02F1/025;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/015 |
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