| 摘要 |
A semiconductor device having a trench element separation region is disclosed. A pad oxide film ( 2 ), and a silicon nitride film ( 3 ) may be formed on a semiconductor substrate ( 1 ). A trench ( 4 ) may be formed by dry etching using the silicon nitride film ( 3 ) as a mask. The silicon substrate ( 1 ) may be thermally oxidized using the silicon nitride film ( 3 ) as an oxidation mask and a modified layer may be formed on the surface of the silicon nitride film ( 3 ). The modified layer may be removed by a neutral radical containing fluorine. The surface of the silicon nitride film ( 3 ) may be etched by a predetermined thickness. A filling insulation film may be deposited to completely fill the trench ( 4 ). The insulation film may then be chemical mechanical polished using the silicon nitride film ( 3 a) as a polishing stopper to form a trench element separation insulation material ( 8 ).
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