| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology for precisely compensating changes in bias conditions of an MOS device, caused by changes in the temperatures/processes of the device. <P>SOLUTION: An IC device is equipped with an MOS device having a gate terminal, a source terminal, and a drain terminal. The gate terminal is connected operably to the input part of the IC device, the drain terminal is connected operably to the output part of the IC device, and the source terminal is connected to a negative voltage supply source. The IC device is also equipped with a bias generator connected operably to the gate terminal of the MOS device. The bias generator generates a bias voltage and/or a bias current which biases the MOS device at an approximately fixed rest point of operation. The bias generator is configured so that the bias voltage and/or the bias current changes as a function of the junction temperature of the MOS device. Thus, the bias generator precisely traces one or more operating conditions of the MOS device, and thereby the performance of the device is improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
