发明名称 |
Method and an apparatus for manufacturing a semiconductor device |
摘要 |
A method and an apparatus for manufacturing a semiconductor device are provided capable of making a barrier metal layer having a thin film and providing a sufficient barrier property with a low manufacturing cost. The method includes forming a barrier metal layer 5 on predetermined positions on a Cu wiring layer 3 formed on a semiconductor substrate by a CVD method or an ALD method, and forming an Al layer 6 on the barrier metal layer 5 without exposing it to the atmosphere.
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申请公布号 |
US2005148177(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20040986406 |
申请日期 |
2004.11.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MURAKAMI KAZUHIRO;KATATA TOMIO;OMOTO SEIICHI |
分类号 |
C23C16/42;H01L21/3205;H01L21/44;H01L21/4763;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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