发明名称 |
Patterning semiconductor layers using phase shifting and assist features |
摘要 |
A photomask and method of patterning a photosensitive layer using a photomask, the photomask including a substrate and a film coupled to substrate. The film is etched with a phase shifted assist feature, a low aspect ratio assist feature or phase shifted low aspect primary features.
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申请公布号 |
US2005147927(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20050070708 |
申请日期 |
2005.03.01 |
申请人 |
SCHENKER RICHARD;ALLEN GARY |
发明人 |
SCHENKER RICHARD;ALLEN GARY |
分类号 |
G03F1/00;G03F1/14;G03F7/00;G03F7/20;G06F17/50;H01L23/58;H01L29/06;(IPC1-7):G03F7/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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