发明名称 Photolithographic method for forming a structure in a semiconductor substrate
摘要 To form a pattern in a semiconductor substrate, a buffer layer, which is formed as a carbon layer, is produced between a photoresist layer and an antireflective layer, which is formed on the substrate. The pattern is produced in the photoresist layer by means of a lithography step, and then it is transferred to the layers arranged below in a subsequent step.
申请公布号 US2005148193(A1) 申请公布日期 2005.07.07
申请号 US20040496102 申请日期 2004.11.23
申请人 INFINEON TECHNOLOGIES AG 发明人 KIRCHHOFF MARKUS;VOGT MIRKO;WEGE STEPHAN;KATZWINKEL FRANK
分类号 G03F7/09;H01L21/027;H01L21/033;H01L21/308;H01L21/31;H01L21/311;H01L21/312;H01L21/3213;H01L21/762;H01L21/8242;(IPC1-7):H01L21/824 主分类号 G03F7/09
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