| 摘要 |
A microminiaturized electronic device and its manufacturing method overcoming the defects of conventional electronic devices of carbon molecules and having performance superior to those of conventional ones. A multilayer carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) partly covered with the outer semiconductive carbon nanotube layer (1) is used. Source and drain electrodes (3, 5) of metal are in contact with both ends of the semiconductive carbon nanotube (1), respectively. A gate electrode (4) of metal is in contact with the metallic carbon nanotube layer (2). A gate insulating layer is formed in the space between the semiconductive and metallic carbon nanotube layers (1, 2). Thus, an insulated-gate field-effect transistor is constructed. The multilayer carbon nanotube (10) is formed into a desired shape of two carbon nanotube layers the outer one of which is a semiconductive carbon nanotube layer (1) and the inner one of which is a metallic carbon nanotube layer (2). These carbon nanotube layers are selected from carbon nanotube layers of a multilayer carbon nanotube.
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