| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a flash device capable of reducing the step of a barrier film for protecting an field oxide film by adjusting the height of a effective oxide film. SOLUTION: The flash device comprises the steps of: sequentially forming a tunnel oxide film 20, a first conductive film 30, and a hard mask film on a semiconductor substrate 10; after etching the hard mask film, the first conductive film, the tunnel oxide film, and the semiconductor substrate to form a trench, filling the trench with a field oxide film, and then flattening the trench; removing the hard mask film to form a device isolation film ; depositing and patterning a second conductive film 60 to form a floating gate electrode; after depositing a dielectric film 70, a third conductive film 80, and a metal film 90 on the entire structure, performing etching to form a gate electrode for the flash device; implementing an ion implantation process to form a source/drain; implementing a predetermined etch process to etch a portion of the projected isolation film; and forming a barrier film 110 on the entire structure. COPYRIGHT: (C)2005,JPO&NCIPI
|
