| 摘要 |
PROBLEM TO BE SOLVED: To measure the temperature of an arbitrary position on a wafer, and to adjust a measurable temperature range and temperature resolution easily. SOLUTION: After measuring the specific resistance of a dissimilar-metal laminating film 3, by bringing the styluses of probes 4a in contact with the dissimilar-metal laminating film 3, a thin film 5 is formed on the whole surface of the dissimilar-metal laminating film 3. Then, by bringing again the styluses of probes 4a in contact with the dissimilar-metal laminating film 3, the specific resistance of the dissimilar-metal laminating film 3 is measured. On the basis of the difference between the specific resistance of dissimilar-metal laminating film 3 before the thin film 5 formation and the specific resistance of dissimilar-metal laminating film 3 after the thin film 5 formation, the actual temperature of the film formation processing in forming the thin film 5 is obtained. COPYRIGHT: (C)2005,JPO&NCIPI
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