发明名称 |
Manufacturing method of semiconductor device |
摘要 |
A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi<SUB>2 </SUB>layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
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申请公布号 |
US2005145897(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20040008276 |
申请日期 |
2004.12.10 |
申请人 |
MATSUO SHUJI;UCHIMURA KATSUHIRO;YOSHIDA YASUKO;FUNAYAMA KOTA;TAKESHIMA YUTAKA |
发明人 |
MATSUO SHUJI;UCHIMURA KATSUHIRO;YOSHIDA YASUKO;FUNAYAMA KOTA;TAKESHIMA YUTAKA |
分类号 |
H01L21/28;H01L21/285;H01L21/304;H01L21/318;H01L21/336;H01L21/768;H01L21/8238;H01L23/522;H01L27/092;H01L29/417;H01L29/78;(IPC1-7):H01L21/336;H01L29/76;H01L31/062;H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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