| 发明名称 |
Method for processing photoresist |
| 摘要 |
Disclosed is a method for processing photoresist. The method of the present invention performs Ar plasma process to the photoresist after or before the photoreisist is formed into a pattern to make the photoresist dense.
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| 申请公布号 |
US2005147926(A1) |
申请公布日期 |
2005.07.07 |
| 申请号 |
US20040749590 |
申请日期 |
2004.01.02 |
| 申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LEE HSIU-CHUN;HUANG TSE-YAO;CHEN YI-NAN;WANG CHIH-TA |
| 分类号 |
G03F7/00;G03F7/16;G03F7/36;G03F7/40;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/00 |
| 代理机构 |
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