发明名称 Semiconductor device, radiation detection device, and radiation detection system
摘要 By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.
申请公布号 US2005145903(A1) 申请公布日期 2005.07.07
申请号 US20050071245 申请日期 2005.03.04
申请人 CANON KABUSHIKI KAISHA 发明人 ISHII TAKAMASA;MOCHIZUKI CHIORI
分类号 H01L27/146;(IPC1-7):H01L31/062;H01L31/113 主分类号 H01L27/146
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