| 摘要 |
PROBLEM TO BE SOLVED: To protect junction leakage in the resistive elements of a diffusion layer having a silicide structure. SOLUTION: As shown in Figure (a), a titanium (Ti) layer 6 is formed by entirely sputtering titanium (Ti). In this way, the p<SP>+</SP>-type diffusion layer 4 touches the titanium layer 6 via the openings 5a and 5b of a silicided block layer 5. Then, the titanium layer 6 touching the p<SP>+</SP>-type diffusion layer 4 is partially formed as silicide through heat treatment shown in Figure (b), and consequently the silicide layers 7a and 7b are formed on the surface of the p<SP>+</SP>-type diffusion layer 4. Furthermore, the titanium layer 6 not formed as silicide is wet-etched for removal as shown in Figure (c). COPYRIGHT: (C)2005,JPO&NCIPI
|
