| 摘要 |
PROBLEM TO BE SOLVED: To easily realize high definition by improving the manufacturing yield and reliability of a semiconductor device in the case of trimming. SOLUTION: The semiconductor device has a substrate 10, a Zener diode 12 which is provided on the substrate 10 and where a pn junction S is formed of 12n of an n-type impurity area and a p-type impurity range 12p, an anode 14a provided so as to be connected with the n-type impurity area 12n of the Zener diode 12, and a cathode 14c provided so as to be connected with the p-type impurity area 12p of the Zener diode 12. The pn junction S of the Zener diode 12 is designated to be on the cathode part 14c compared with the side of the anode part 14a. COPYRIGHT: (C)2005,JPO&NCIPI
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