EPITAXIAL LATERAL OVERGROWTH SUBSTRATE, ITS MANUFACTURING METHOD, AND NITRIDE SEMICONDUCTOR DEVICE HAVING THE EPITAXIAL LATERAL OVERGROWTH SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial lateral overgrowth substrate less in warpage or distortion and little crystal defect. SOLUTION: The epitaxial lateral overgrowth substrate comprises a mother substrate, an island-like protective layer disposed on the mother substrate, and a GaNP layer disposed in contact with the upper faces and the sidewalls of the mother substrate and of the island-like protective layer. COPYRIGHT: (C)2005,JPO&NCIPI