发明名称 |
METHOD OF FABRICATING A COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR |
摘要 |
A method of fabricating a complementary bipolar junction transistor includes forming a polycrystalline silicon layer on an NPN bipolar junction transistor region and a PNP bipolar junction transistor region, respectively implanting an N-type impurity and a P-type impurity into the polycrystalline silicon layer, and then diffusing to respectively form an N-type emitter region and a P-type emitter region within a P-type base region and an N-type base region. By patterning the polycrystalline silicon layer, an N-type emitter electrode and a P-type emitter electrode are simultaneously formed. The polycrystalline silicon layer is used for simultaneously forming the N-type emitter electrode of the NPN bipolar junction transistor and the P-type emitter electrode of the PNP bipolar junction transistor by a single depositing and etching process.
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申请公布号 |
US2005148135(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20040025054 |
申请日期 |
2004.12.30 |
申请人 |
NAM DONG-KYUN;BAE SUNG-RYOUL |
发明人 |
NAM DONG-KYUN;BAE SUNG-RYOUL |
分类号 |
H01L21/8228;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8228 |
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