发明名称 Semiconductor memory apparatus
摘要 A semiconductor memory apparatus is provided which has a simple circuit configuration and is capable of randomly accessing fuse data. In the semiconductor memory apparatus of the present invention, a fuse cell 30 including a fuse 31 is connected to a pair of bit lines of a memory circuit. The fuse 31 and a fuse data output circuit (which includes a resistor 32 and an inverter 33 ) are connected to a pair of bit lines BLT and BLB of the memory circuit through a fuse selection switch 34 . In the semiconductor memory apparatus of the present invention, by allowing a column decoder 12 for selecting a pair of bit lines of the memory cell to also function as a decoder circuit for selecting a fuse, the bit lines of the memory circuit can be used as signal lines for outputting fuse data, whereby the circuit size is reduced and the circuit area is reduced.
申请公布号 US2005146969(A1) 申请公布日期 2005.07.07
申请号 US20040023663 申请日期 2004.12.29
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MURAKUKI YASUO;SAKAGAMI MASAHIKO;IWANARI SHUNICHI
分类号 G01R31/28;G11C7/00;G11C7/10;G11C11/401;G11C17/18;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 主分类号 G01R31/28
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