发明名称 |
Semiconductor memory apparatus |
摘要 |
A semiconductor memory apparatus is provided which has a simple circuit configuration and is capable of randomly accessing fuse data. In the semiconductor memory apparatus of the present invention, a fuse cell 30 including a fuse 31 is connected to a pair of bit lines of a memory circuit. The fuse 31 and a fuse data output circuit (which includes a resistor 32 and an inverter 33 ) are connected to a pair of bit lines BLT and BLB of the memory circuit through a fuse selection switch 34 . In the semiconductor memory apparatus of the present invention, by allowing a column decoder 12 for selecting a pair of bit lines of the memory cell to also function as a decoder circuit for selecting a fuse, the bit lines of the memory circuit can be used as signal lines for outputting fuse data, whereby the circuit size is reduced and the circuit area is reduced.
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申请公布号 |
US2005146969(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20040023663 |
申请日期 |
2004.12.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MURAKUKI YASUO;SAKAGAMI MASAHIKO;IWANARI SHUNICHI |
分类号 |
G01R31/28;G11C7/00;G11C7/10;G11C11/401;G11C17/18;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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