| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device including a semiconductor substrate, a device isolation region formed by filling a trench in the semiconductor substrate with dielectric material and defining device regions in the semiconductor substrate. The trench has a rounded upper edge, and a dummy thin layer formed on the rounded upper edge. |
| 申请公布号 |
KR20050071089(A) |
申请公布日期 |
2005.07.07 |
| 申请号 |
KR20030101930 |
申请日期 |
2003.12.31 |
| 申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
CHOI, YONG KEON |
| 分类号 |
H01L21/76;H01L21/336;H01L21/762;H01L21/8238;H01L29/06;H01L29/78 |
主分类号 |
H01L21/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
