| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily form a plurality of metal structures of different heights on a semiconductor substrate. <P>SOLUTION: A plurality of seed layers 20c, 20'a, 20'b are electrically isolated and formed respectively according to the heights of the metal structures of the different heights to be formed on the semiconductor substrate, then plating is applied using a plating mold, and a thickness of plating is adjusted by each seed layer by applying different currents to respective seed layers. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
