发明名称 BRAZING MATERIAL, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a brazing material which can suppress an occurrence of a void in a jointed portion by setting its melting point between 260-425°C and improving its wettability with a solder. SOLUTION: The semiconductor device is assembled by die-bonding semiconductor elements using a brazing material composed of: 30-65 mass% Sb, 0.001-0.5 mass% P, and the balance being Sn and inevitable impurities; or 30-65 mass% Sb, 0.001-0.5 mass% P, 0.01-5 mass% in total of one or more kinds among Ag, Cu, Fe and Ni, and the balance being Sn and inevitable impurities. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005177842(A) 申请公布日期 2005.07.07
申请号 JP20030424863 申请日期 2003.12.22
申请人 SUMITOMO METAL MINING CO LTD 发明人 MORI NOBUMOTO
分类号 B23K35/26;C22C12/00;C22C13/02;H01L21/52;H05K3/34;(IPC1-7):B23K35/26 主分类号 B23K35/26
代理机构 代理人
主权项
地址
您可能感兴趣的专利