发明名称 |
Recording medium comprising ferroelectric layer, nonvolatile memory device comprising recording medium, and methods of writing and reading data for the memory device |
摘要 |
A recording medium including a ferroelectric layer, a nonvolatile memory device including the recording medium and methods of wiring and reading data in the memory device. The recording medium includes: a lower electrode; a ferroelectric layer to which data is recorded, formed on the lower electrode; a barrier layer formed on the ferroelectric layer; and a semiconductor layer formed on the barrier layer. The nonvolatile memory device includes a probe that reads and writes the data. Furthermore, in the method of writing data, a writing voltage is applied between the probe, which contacts the semiconductor layer, and the lower electrode and, in the method of reading data, a state of a remanent polarization of the ferroelectric layer is determined by applying a reading voltage between the probe and the semiconductor layer.
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申请公布号 |
US2005147018(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20040925147 |
申请日期 |
2004.08.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM YUN-SEOK;HONG SEUNG-BUM;NO KWANG-SOO |
分类号 |
G11B9/00;G11B9/02;G11B9/14;G11C11/22;(IPC1-7):G11B9/00 |
主分类号 |
G11B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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