发明名称 ENERGY DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To enhance both of capacity and cycle characteristics of an energy device using a thin film containing silicon as the main component as a negative active material. <P>SOLUTION: A negative active material thin film installed directly or through a primary coat on a current collector layer has a multilayer structure containing two or more silicon thin films containing silicon as the main component. Increase in thickness of the silicon thin film per layer can be prevented by increasing the number of silicon thin film layers even if the thickness of the negative active material thin film is increased. Growth of almost reverse truncated cone-like silicon particles in the silicon thin film can be prevented. Even if the negative active material layer is made thick and capacity is increased, drop in cycle characteristics can be prevented. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005183364(A) 申请公布日期 2005.07.07
申请号 JP20040314156 申请日期 2004.10.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HONDA KAZUYOSHI;OISHI KIICHIRO;MIFUJI YASUHIKO;NAKAMOTO TAKAYUKI
分类号 H01M4/13;H01M4/134;H01M4/139;H01M4/1395;H01M4/38;H01M4/48;H01M10/05 主分类号 H01M4/13
代理机构 代理人
主权项
地址