| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flash memory cell capable of preventing a recovery failure, reducing a recovery time, and improving electric characteristics of a device and the reliability of a circuit, and to provide a method of erasing the same. <P>SOLUTION: The flash memory cell comprises: a drain formed of a P-type semiconductor substrate; a channel region comprised of a triple n-well; a source comprised of P-well formed in the triple n-well; a floating gate formed on the channel region; a tunnel oxide film formed under the floating gate; a control gate formed in a predetermined pattern on the whole structure including the floating gate; and a dielectric film formed under the control gate. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
