发明名称 ONE-TIME PROM CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a one-time PROM circuit which occupies a smaller area on a semiconductor integrated circuit. <P>SOLUTION: When information is read, transistors Q1, Q2, and Q3 functioning as switch elements are all turned off. A voltage is applied from a voltage source VB through a diode D10 to a terminal P1, and the collector currents of transistors Q4, Q6 and Q8 serving as current sources are supplied to Zener Zap diodes Z1, Z2 and Z3. At this time, the difference of resistance values due to the presence or absence of write causes the difference of a voltage drop in each PROM element, a voltage level difference is generated in each read terminal with respect to a reference voltage terminal, and this is correlated to the state 0 and 1 of digital representation. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005182899(A) 申请公布日期 2005.07.07
申请号 JP20030421154 申请日期 2003.12.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 RYU TAKASHI
分类号 G11C17/06;H01L27/10;(IPC1-7):G11C17/06 主分类号 G11C17/06
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