| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growing apparatus which can make a flow channel of material gas flowing on a silicon single crystal substrate more uniformly to assure a good film thickness distribution, and to provide a method of manufacturing an epitaxial wafer using the same. SOLUTION: The vapor phase growing apparatus 1 is constituted as a sheet type. The material gas G is guided from a gas inlet 21 into a reaction vessel 2. A bank member 23 is disposed around a susceptor 12. There is provided a mechanism that the material gas G from the gas inlet 21 hits on the outer peripheral surface 23b of the bank member 23 and rides on the upper surface 23a side, and then flows along the main surface of the single crystal substrate W installed in the susceptor 12. An upper lining member 4 is disposed in the shape facing the bank member 23 above the bank member 23. A gas introducing gap 60 is formed between the bank member 23 and the upper lining member 4. In the vapor phase growing apparatus 1, the forming length of the direction along the horizontal reference line HSL of the gas introducing gap 60 is reduced as it keeps away from the horizontal reference line HSL or the upper lining member 4 is regulated in size so as to become constant also at any position. COPYRIGHT: (C)2005,JPO&NCIPI |
