| 摘要 |
PROBLEM TO BE SOLVED: To prevent reliability deterioration due to migrating ions in a CVD oxide film and in molding resin in a guard ring region by forming a thermal oxide film on the top surface of the guard ring region thicker than a cell region and arranging the CVD oxide film far away from a semiconductor layer surface. SOLUTION: A semiconductor device as an embodiment of the present invention has a thermal oxide film 25 in an actual operation area and a thermal oxide film 26 in the guard ring region formed through the same process. The thermal oxide film 25 after temporarily being removed is formed again and then the film thickness of the thermal oxide film 26 in the guard ring region is, for example, about 8,000 to 10,000Å. COPYRIGHT: (C)2005,JPO&NCIPI |
