摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor, to which device isolation for reducing dark signals is applied, and a fabrication method thereof. SOLUTION: The image sensor comprises a logic unit, and a photoreceptor unit having a plurality of photodiodes, wherein the photodiode regions adjacent to the photoreceptor unit are isolated from each other by a field ion-implantation region 20 formed under the surface of a semiconductor substrate, and a dielectric 30 formed on the upper part of the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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