发明名称 IMAGE SENSOR CAPABLE OF REDUCING DARK SIGNALS AND METHOD OF ISOLATING DEVICE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide an image sensor, to which device isolation for reducing dark signals is applied, and a fabrication method thereof. SOLUTION: The image sensor comprises a logic unit, and a photoreceptor unit having a plurality of photodiodes, wherein the photodiode regions adjacent to the photoreceptor unit are isolated from each other by a field ion-implantation region 20 formed under the surface of a semiconductor substrate, and a dielectric 30 formed on the upper part of the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005183920(A) 申请公布日期 2005.07.07
申请号 JP20040194527 申请日期 2004.06.30
申请人 HYNIX SEMICONDUCTOR INC 发明人 RIM JAE-YOUNG;KO HO-SOON
分类号 H01L21/316;H01L21/00;H01L21/336;H01L21/76;H01L27/14;H01L27/146;H01L31/00;H04N5/335;H04N5/361;H04N5/369;H04N5/374;(IPC1-7):H01L27/146 主分类号 H01L21/316
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