| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a mask pattern suitable for highly precisely forming a thin film pattern having fine dimensions. SOLUTION: This mask pattern forming method comprises a process for successively laminating a lower resist layer 2 and an upper resist layer 3, and for selectively exposing and developing them to form a two-layer resist pattern 5Z including first and second regions 5A and 5B and a third region 5C connecting the first and second regions 5A and 5B; a process for forming a reinforcing layer 8 so that at least a portion of an upper resist layer 3C in the third region 5C can be covered; and a process for forming a mask pattern 5 having a bridge structure 9 by removing the lower resist layer 2C in the third region 5C. Thus, it is possible to improve the rigidness of the bridge 3C, and to obtain a mask pattern 5 whose deformation such as bending is hardly generated. This mask pattern 5 is made suitable for highly precisely forming a thin film pattern having fine dimensions. COPYRIGHT: (C)2005,JPO&NCIPI
|
