| 摘要 |
PROBLEM TO BE SOLVED: To form a sputtering film of high quality having little damage and residual stress due to plasma and radiant heat thereof, at a relatively high speed. SOLUTION: A sputtering apparatus has a substrate 1 to have the sputtering film formed thereon, and first and second cathodes 101 and 102 which arranges first and second targets 41 and 42 therein and are placed so as to be perpendicular to the substrate 1 and face each other, in a vacuum chamber 10. The sputtering apparatus is provided with curving-magnetic-field-generating means 6a and 6b for generating a closed-tunnel-shaped curving magnetic field 8 in which magnetic lines of force direct to an outer circumferential part from the center of the surface of the first target 41, on the back surface of the first target 41, and curving magnetic-field-generating means 6c and 6d for generating a closed-tunnel-shaped curving magnetic field 8 in which magnetic lines of force direct to the center from the outer circumferential part of the surface of the second target 42, on the back surface of the second target 42. COPYRIGHT: (C)2005,JPO&NCIPI
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