| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-quality nitride semiconductor template for an LED which has minimized potential defects, and a method for manufacturing the template quickly and efficiently. <P>SOLUTION: In a method for manufacturing a nitride semiconductor template including a substrate having an irregular surface on one side, and a nitride semiconductor layer formed on the irregular surface of the substrate, wherein an interface between the substrate and the nitride semiconductor layer has small cavities of 1 to 1,000 nm in size; (a) a step of forming irregularity on one surface of the substrate, and (b) a step of depositing the nitride semiconductor layer on the irregular surface of the substrate by hydride vapor deposition are included. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
