发明名称 |
MONOLITHIC INTEGRATED SEMICONDUCTOR OPTICAL DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical device which makes it possible to minimize the intensity loss of light outputted from a light source and precisely monitor the intensity of light. SOLUTION: A semiconductor optical device 300 includes a substrate 310, a first waveguide 320 which includes a first active layer 321 for generating light and is formed on the substrate 310, a semi-insulating layer 340 which has a window area 340a for diffusing and outputting light outputted from the first waveguide 320 and is grown on the substrate 310 so as to surround the first waveguide 320, and one or more second waveguides 330 which have a second active layer 331 formed in the window area 340a closely to the first waveguide 320 to detect a part of light diffused in the window area 340a. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005183956(A) |
申请公布日期 |
2005.07.07 |
申请号 |
JP20040358087 |
申请日期 |
2004.12.10 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KYO HEIKEN;KIM IN;BAE YU-DONG;PARK BYUNG HUN;LEE SANG-MOON;KIM YOUNG-HYUN |
分类号 |
G02B6/122;G02B6/26;H01L31/12;H01S5/026;(IPC1-7):H01S5/026 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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