| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein generation of voids in a wiring layer under elevated temperature environment is suppressed, electrical continuity failure of the wiring layer is suppressed, and reliability of the semiconductor device having multilayer wiring structure can be improved. SOLUTION: The method for manufacturing a semiconductor device is provided with a process for forming a wiring trench 38 in an interlayer insulating film 34, a process for forming the wiring layer 44 whose main material is Cu in the wiring trench 38, and a process for performing nitrogen two-phase flow treatment in which nitrogen gas and hotwater are sprayed simultaneously to the surface of the wiring layer 44 embedded in the wiring trench 38. COPYRIGHT: (C)2005,JPO&NCIPI
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