| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of gate leak and punch through of impurities in a low voltage transistor caused by that a gate oxide film and a gate nitride film of the low voltage transistor are thin, since the gate nitride film of the low voltage transistor can not be made thicker than the nitride film of a high voltage transistor in a conventional manufacturing method of a semiconductor device. SOLUTION: The manufacturing method of a semiconductor device comprises a process for forming a second nitride film by performing plasma nitriding for a second nitride film of the practically same thickness, as a first nitride film formed on a second oxide film in a second region for forming a second gate insulating film for a second transistor which operates at a voltage lower than one voltage, with the first nitride film covered formed on the first oxide film in a first region for forming a first gate insulating film for a first transistor which operates at the one voltage. COPYRIGHT: (C)2005,JPO&NCIPI
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