发明名称 CATALYST CVD APPARATUS AND CATALYST CVD METHOD
摘要 PROBLEM TO BE SOLVED: To provide a catalyst CVD (chemical vapor deposition) apparatus and a catalyst CVD method having high productivity capable of prolonging the lifetime of a catalyst even when material gas containing oxygen is used. SOLUTION: The catalyst CVD apparatus comprises a vacuum container capable of maintaining a decompression atmosphere, a reverse flow suppressing means to divide the vacuum container into a first space and a second space communicating with each other via a through-hole, a first gas inlet to introduce gas into the first space, a first catalyst provided in the first space, a second gas inlet to introduce gas into the second space, a substrate stage which is provided in the second space and capable of placing a substrate thereon, and an exhaust means connected to the second space. A thin film can be deposited on the substrate placed on the substrate stage by introducing raw gas from the first and second gas inlets while maintaining the vacuum container in a decompression state by the exhaust means, and heating the first catalyst to decompose the raw gas introduced from the first gas inlet. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005179743(A) 申请公布日期 2005.07.07
申请号 JP20030423264 申请日期 2003.12.19
申请人 TOSHIBA CORP 发明人 SAITO TAKESHI
分类号 C23C16/452;H01L21/31;(IPC1-7):C23C16/452 主分类号 C23C16/452
代理机构 代理人
主权项
地址
您可能感兴趣的专利