发明名称 HEATER DEVICE FOR PRODUCING SINGLE CRYSTAL SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To decrease the number of electrodes to decrease the number of parts and the cost for realizing a heater device comprising a plurality of heaters, to mechanically stably support the heater and to obtain uniform temperature distribution of the heater. SOLUTION: In the heater device for producing a single crystal semiconductor, a base 40 is provided with one base side negative electrode 44 common for the all heaters 10, 20, 30, and the base side negative electrode 44 is electrically connected to a plurality of heater side negative electrodes 12, 22, 32 of the all heaters 10, 20, 30, respectively. The heaters 10, 20, 30 are provided with heater side positive electrodes 11, 21, 31 and with the negative electrodes 12, 22, 32, respectively, opposing to each other in the diameter direction of the heaters 10, 20, 30. The common base side negative electrode 44 common in the base 40 is electrically connected to the heater side negative electrodes 12, 22, 32 of the heaters 10, 20, 30 via an extension member 53 for the negative electrode. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005179099(A) 申请公布日期 2005.07.07
申请号 JP20030419694 申请日期 2003.12.17
申请人 KOMATSU ELECTRONIC METALS CO LTD 发明人 SHIRAISHI YUTAKA;KOMATSU TAKEHIRO
分类号 H05B3/03;C30B15/14;C30B29/06;H05B3/62;(IPC1-7):C30B15/14 主分类号 H05B3/03
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