发明名称 |
Rugged heterojunction bipolar transistor power device and the method thereof |
摘要 |
A rugged heterojunction bipolar transistor (HBT) power device and the optimal design method thereof are disclosed. By combining the epitaxial layer structure design (embedded emitter ballasting resistor and high breakdown voltage) and power cell design (clamping diodes and base ballasting resistor optimization), HBT power devices with excellent power performance and high ruggedness can be obtained.
|
申请公布号 |
US2005149885(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20030747051 |
申请日期 |
2003.12.30 |
申请人 |
WIN SEMICONDUCTORS CORP. |
发明人 |
WANG YU-CHI;HUANG JEN-HAO;TSAI TSUNG-CHI;TU MIN-CHANG |
分类号 |
G06F17/50;H01L29/73;H01L29/737;(IPC1-7):G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|