| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory in which additional circuits are reduced and which can be integrated to a high density while being able to accurately read recorded information. SOLUTION: The magnetic memory has a magnetic storage element 10 with a storage layer 6 holding the information under the magnetized state of a magnetic substance and two kinds of mutually crossed wirings. The memory is constituted so that the element 10 is arranged near the intersection of the wirings, and the layer 6 is configured by laminating at least two layers or more of the magnetic layers 1 and 2 so that the directions of the magnetizations M1 and M2 of the upper and lower magnetic layers 1 and 2. The memory is constituted so that a magnetic layer 3 for a read-out is formed to the layer 6 through a non-magnetic layer 5 and the information is recorded by changing the directions of the magnetizations M1 and M2 of the layer 6 by a current magnetic field generated from the current made to flow through two kinds of the wirings. The memory is constituted so that the directions of the magnetization M3 of the magnetic layer 3 for the read is changed by the current magnetic field by making the current flow through at least one of two kinds of the wirings, and the information recorded to the layer 6 is read by detecting the resistance change of the element 10. COPYRIGHT: (C)2005,JPO&NCIPI
|
