发明名称 Analysis apparatus for semiconductor LSI circuit
摘要 A semiconductor integrated circuit electrostatic discharge analysis apparatus includes a resistance network generation unit generating a resistance network served as a power supply interconnect equivalent circuit in a logic cell region of a semiconductor LSI circuit based on pitch, width and a sheet resistance of a power supply interconnect; a protection network generation unit generating an electrostatic discharge protection network with pads and protection elements placed in an I/O cell region of the changing semiconductor LSI circuit, connected to the resistance network; and an analysis unit calculating an inter-pad voltage between the pads when electrostatic discharge equivalent current flows between the pads.
申请公布号 US2005146380(A1) 申请公布日期 2005.07.07
申请号 US20040890025 申请日期 2004.07.12
申请人 HAYASHI SACHIO 发明人 HAYASHI SACHIO
分类号 G06F17/50;H01L21/82;H01L27/02;H03F1/26;H03F1/30;(IPC1-7):H03F1/26 主分类号 G06F17/50
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