发明名称 Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation
摘要 An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection circuit includes a silicon controlled rectifier (SCR) having at least one first type high dopant region coupled to a first reference potential of the protected circuitry, and at least one second type high dopant region coupled to a second reference potential of the IC. The SCR is triggered by an external on-chip trigger device, which is adapted for injecting a trigger current into at least one gate of the SCR.
申请公布号 US2005145947(A1) 申请公布日期 2005.07.07
申请号 US20050032462 申请日期 2005.01.10
申请人 RUSS CORNELIUS C.;MERGENS MARKUS P.J.;ARMER JOHN;VERHAEGE KOEN G.M. 发明人 RUSS CORNELIUS C.;MERGENS MARKUS P.J.;ARMER JOHN;VERHAEGE KOEN G.M.
分类号 H01L27/02;H01L29/74;(IPC1-7):H01L29/788 主分类号 H01L27/02
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