发明名称 |
Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation |
摘要 |
An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection circuit includes a silicon controlled rectifier (SCR) having at least one first type high dopant region coupled to a first reference potential of the protected circuitry, and at least one second type high dopant region coupled to a second reference potential of the IC. The SCR is triggered by an external on-chip trigger device, which is adapted for injecting a trigger current into at least one gate of the SCR.
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申请公布号 |
US2005145947(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20050032462 |
申请日期 |
2005.01.10 |
申请人 |
RUSS CORNELIUS C.;MERGENS MARKUS P.J.;ARMER JOHN;VERHAEGE KOEN G.M. |
发明人 |
RUSS CORNELIUS C.;MERGENS MARKUS P.J.;ARMER JOHN;VERHAEGE KOEN G.M. |
分类号 |
H01L27/02;H01L29/74;(IPC1-7):H01L29/788 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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