发明名称 |
BORIDE THIN FILMS ON SILICON |
摘要 |
Boride thin films of conducting and superconducting materials are formed on silicon by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, on silicon substrates by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the silicon substrates. |
申请公布号 |
WO2005010953(A3) |
申请公布日期 |
2005.07.07 |
申请号 |
WO2004US05289 |
申请日期 |
2004.02.24 |
申请人 |
PENN STATE RESEARCH FOUNDATION;LIU, ZI-KUI;LIU, ZHI-JIE;XI, XIAOXING |
发明人 |
LIU, ZI-KUI;LIU, ZHI-JIE;XI, XIAOXING |
分类号 |
C23C14/00;C23C14/06;H01L39/24 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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