METHOD OF FABRICATING DEEP SUB-MICRON CMOS SOURCE/DRAIN WITH MDD AND SELECTIVE CVD SILICIDE,申请号KR20020064856-传众专利搜索

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发明名称	METHOD OF FABRICATING DEEP SUB-MICRON CMOS SOURCE/DRAIN WITH MDD AND SELECTIVE CVD SILICIDE
摘要
申请公布号	KR100499755(B1)	申请公布日期	2005.07.07
申请号	KR20020064856	申请日期	2002.10.23
申请人		发明人
分类号	H01L21/28;H01L27/092;H01L21/205;H01L21/265;H01L21/285;H01L21/336;H01L21/8238;H01L29/78;(IPC1-7):H01L27/092	主分类号	H01L21/28
代理机构		代理人
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