发明名称 |
Dual-wavelength exposure for reduction of implant shadowing |
摘要 |
A method for generating a photoresist structure is disclosed in which a layer of photoresist is deposited over a semiconductor substrate. In a first exposure, the layer of photoresist is exposed to deep ultraviolet light. A second exposure is then performed using a different wavelength of light to pattern the layer of photoresist. The photoresist is then developed so as to form a photoresist structure having reduced thickness and rounded corners. This gives a photoresist structure having a reduced shadow area. An angled ion implant can then be performed using the photoresist structure as a mask.
|
申请公布号 |
US6913872(B1) |
申请公布日期 |
2005.07.05 |
申请号 |
US20020262301 |
申请日期 |
2002.09.30 |
申请人 |
INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
STURTEVANT JOHN L.;GU YIMING;CHOU DYIANN;LOM CHANTHA |
分类号 |
G03F7/20;G03F7/40;H01L21/265;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|