发明名称 |
Method for fabricating a moat around an active pixel area of a microelectronic image projection device |
摘要 |
A method for fabricating a microelectronic image projection device. One or more nitride dams are formed upon the substrate of the device surrounding the active pixel area. The nitride dams help to contain the liquid crystal and confine the epoxy sealant. In alternative embodiments one or more nitride pillars are formed on the substrate to support the cover glass and maintain the distance between the cover glass and the active pixel area of the substrate. The nitride dams and pillars may be formed on the substrate through an ion implantation method in which HDP nitride is implanted with, for example, silicon ions. The ion implantation causes those areas of the nitride that are implanted with ions to etch more slowly than those areas that are not implanted with ions. This etch rate differential allows formation of the nitride formations with a non-contact single mask etching process.
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申请公布号 |
US6914658(B2) |
申请公布日期 |
2005.07.05 |
申请号 |
US20020330931 |
申请日期 |
2002.12.26 |
申请人 |
INTEL CORPORATION |
发明人 |
SESHAN KRISHNA;LI CHAOYANG;BAKKER GEOFFERY L.;DASS LAWRENCE |
分类号 |
G02F1/1339;G02F1/1341;(IPC1-7):G02F1/133 |
主分类号 |
G02F1/1339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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