发明名称 INTEGRATED INRUSH CURRENT LIMITER CIRCUIT AND METHOD
摘要 An inrush current limiter circuit (20) includes a mirrored transistor (50) responsive to a control signal (VDRIVE) developed from a sense current (ISENSE), and has a first source (51) coupled to a supply voltage, a common drain (53) that routes a load current (ILOAD) to an output node (45), and a second source that samples the load current to produce the sense current. A fault protection circuit (64) disables the mirrored transistor in response to a first fault condition (TEMP, UVLO) and is coupled to a first lead (43) for externally adjusting a fault threshold. A fault communication circuit (250) is coupled to the first lead to receive a fault signal representative of an external fault condition to disable the mirrored transistor.
申请公布号 KR20050070127(A) 申请公布日期 2005.07.05
申请号 KR20057008550 申请日期 2003.10.01
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. 发明人 BALL ALAN R.
分类号 H02H3/00;H02H9/00;(IPC1-7):H02H9/02 主分类号 H02H3/00
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