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发明名称
CAPACITOR WITH IMPROVED SURFACE AREA AND METHOD FOR MANUFACTURING THE SAME
摘要
申请公布号
KR20050067530(A)
申请公布日期
2005.07.05
申请号
KR20030098516
申请日期
2003.12.29
申请人
HYNIX SEMICONDUCTOR INC.
发明人
PARK, KI SEON
分类号
H01L27/04;(IPC1-7):H01L27/04
主分类号
H01L27/04
代理机构
代理人
主权项
地址
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