发明名称 |
Configuration for generating a voltage sense signal in a power semiconductor component |
摘要 |
The invention relates to a configuration for generating a low-voltage signal proportional to the high voltage present between the source and the drain of a power transistor. For this purpose, a capacitive voltage divider including the source-gate capacitance serving as a low-voltage tap and the source-drain capacitance serving as a high-voltage element is situated in a voltage sense region.
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申请公布号 |
US6914297(B2) |
申请公布日期 |
2005.07.05 |
申请号 |
US20030629107 |
申请日期 |
2003.07.29 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DEBOY GERALD;WILLMEROTH ARMIN |
分类号 |
G11C11/00;H01L23/62;H01L27/02;H01L29/76;H03K17/08;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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