发明名称 Configuration for generating a voltage sense signal in a power semiconductor component
摘要 The invention relates to a configuration for generating a low-voltage signal proportional to the high voltage present between the source and the drain of a power transistor. For this purpose, a capacitive voltage divider including the source-gate capacitance serving as a low-voltage tap and the source-drain capacitance serving as a high-voltage element is situated in a voltage sense region.
申请公布号 US6914297(B2) 申请公布日期 2005.07.05
申请号 US20030629107 申请日期 2003.07.29
申请人 INFINEON TECHNOLOGIES AG 发明人 DEBOY GERALD;WILLMEROTH ARMIN
分类号 G11C11/00;H01L23/62;H01L27/02;H01L29/76;H03K17/08;(IPC1-7):H01L29/76 主分类号 G11C11/00
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